高频MOS－CV特性的界面态形变及其测量

THE HIGH FREQUENCY MOS-CV CHARACTERISTIC DISTORTED BY INTERFACF STATE AND IT’S MEASUREMENT

讨论了工艺过程中产生的界面态陷阱电荷Ｑ（ｉｔ）对高频ＭＯＳ－ＣＶ特性线的形变规律，提出了一种沿电压方向形变的数据处理方法，以此算出Ｑ（ｉｔ）密度在禁带中的分布，并对常规高频ＣＶ法的测量误差作了讨论和修正，由于数据的采集和处理可以由微机完成，使这种方法变得简便、准确并易于在工艺线上推广使用。

The measurement and control of the interface state trap charge have been an importantsubject for the semiconductor technology. This paper discusses the regulation of distortionabout the high frequency MOS-CV characteristic curve which raised by the interface statetrap charge appeared in the technology process,and provides a data processing method of dis-torting along the gate voltage,thus figuring out Q(it)’s density distribution in the energy gap,and correcting the errors in the conventional CV method measurement, The measurementbecomes simple,accurate and easily used in-line verification because the sampling and pro-cessing of the data can be completed by computer.