摘要
提出了采用调制热源,热沉边界条件下的超低频薄膜纵向热导率测试方法,结合金属薄膜的弱温度探测,使薄膜厚度方向的热导率测试进入到了亚微米量级.室温下 热导率采用了线性拟合外推法求得.实测的多孔 SiO2薄膜热导率比致密的块体材料 低了 3个量级,为 0.001W/m·K.
Method is proposed to measure the lognitudinal thermal conductivity of thin film with a modulated heat source of ultra-low frequency under heat sink boundary condition. Combined with the measurement of weak temperature fluctuation by metal thin film resistance ,longitu-dinal thermal conductivity of the thin film with thickness of sub-micrometer magnitude can be measured. Linear regressive extrapolation method is used to obtain the thermal conductivi-ty under roon temperature. Measured thermal conductivity of porous silica thin films is lower than that of the bulk materials by three orders of magnitude and the value is 0. 001 W/m· K.
出处
《西安交通大学学报》
EI
CAS
CSCD
北大核心
1995年第9期78-83,共6页
Journal of Xi'an Jiaotong University
基金
国家"863"高技术新材料研究计划资助项目.