摘要
用Raman光谱测量了高剂量B^+注入后,经不同激光功率退火的SOM上的硅膜.硅膜的晶化和杂质的激活,在光谱上得到充分的反映.满足临界条件的激光退火工艺,可使SOM达到制作压敏器件的要求.设计了两种不同的样品区域,来分辨晶化与重掺各目对Raman散射的贡献.对光谱特征随退火功率的变化以及Fano线形问题,作了初步的分析讨论.
High-dose B^+ implanted silicon films on SOM structures, annealed with various laser po-wers have been measured by use of Raman spectroscopy.The effects of crystallization and impurity activation in the films might be observed unambiguously on the spectra.The SOMs withqualities required in the fabrication of pressure-sensitive devices can be achieved by laser anne-aling provided that certain kinds of critical condition are realized through the determination byRaman measurements.In order to distinguish the individual contribution from both crystalliza-tion and heavy doping to the Raman peak,two regions on the SOM sample were designed,dif-fering from each other only at whether it was implanted.The dependence of Raman featureson the laser power used in annealing,and the problem of Fano-type lineshape are discussed.
基金
国家教委博士点基金
