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重掺锑硅单晶制备中锑的蒸发速率常数的测定 被引量:2

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摘要 重掺锑硅单晶制备中锑的蒸发速率常数的测定常青,曾世铭,何林,王君毅(北京有色金属研究总院100088)关键词:硅单晶,锑,掺杂,蒸发速率,测定(一)实验重掺锑硅单晶是在CG-3000型直拉单晶炉上研制的,直径为82mm,晶向(111)。石英坩埚直径为...
出处 《稀有金属》 EI CAS CSCD 北大核心 1995年第3期235-236,共2页 Chinese Journal of Rare Metals
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同被引文献12

  • 1ASTM Committee F-1. Annual Book of ASTM Standards 2000, Vol. 10.05 Electronics (11) F723-99 IS]. West Conshohocken, PA:Am. Soc. Test. Mater, 1999.
  • 2Scala R, Porrini M, Borionetti G. Growth and Char- acterization of Heavily Doped Silicon Crystals [J]. Cryst Res Technol, 2011, 46(8): 749-754.
  • 3Ostrogorsky A G. Combined-convection Segregation Coefficient and Related Nusselt Numbers [J]. J Cryst Growth, 2013, 380: 43-50.
  • 4Bradshaw S E, Mlavsky A I. The Evaporation of Im- purities from Silicon [J]. J Electron Control, 1956, 2(2): 134- 144.
  • 5Hurle D T J.Constitutional supercooling during crystal growth from stirred melts-I:Theoretical[J].Solid State Electronics,1961,3(1):37-44.
  • 6Taishi T,Huang X M,Kubota M,et al.Heavily boron-doped Czochralski(CZ) silicon crystal growth:segregation and constitutional supercooling[J].Materials Science and Engineering:B,2000,72(2/3):169-172.
  • 7佘思明.重掺锑硅单晶析出的本质[J].全国硅材料经验交流资料汇编,1979:66-71.
  • 8ASTM Committee F-1.Annual Book of ASTM Standards 2000,Vol.10.05 Electronics(11) F723-99[S].West Conshohocken,PA:Am.Soc.Test.Mater,1999.
  • 9Bkadshaw S E,Mlavsky A I.The evaporation of impurities from silicon[J].Journal of Electronics and Control,1956,2(2):134-144.
  • 10Scala R,Porrini M,Borionetti G.Growth and characterization of heavily doped silicon crystals[J].Crystal Research and Technology,2011,46(8):749-754.

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