摘要
本文用空心阴极离子淀积系统,在氮和氩的混合气体中淀积了TiN薄膜.X射线衍射方法、俄歇电子谱(AES)和电学测量等方法用来研究分析了TiN薄膜的结构、组分和薄膜电阻率.该TiN薄膜有很低的电阻率,其电阻率约为25μΩcm.Al/TiN/Si金属化系统经550℃、30分钟热退火后,卢瑟富背散射(RBS)分析结果表明,没有发现互扩散现象,说明TiN在硅集成电路中是一种良好的扩散势垒材料.
TiN films were deposited on silicon wafers by hollow cathode discharge (HCD) system inan Ar-N_2 gas mixture.The composition, Crystalline structure of film and electrical properieswere investigated by X-ray diffraction analysis,Auger electron spectroscopy (AES) and elec-trical characteristics measurements.The TiN films have very low resistivity of 25 μΩcm-Rutherford backscattering studies showed that TiN Sandwithed in between Al and Si is an excel-lent diffusion barrier up to 550℃ for 30 min of annealing.
基金
国家自然科学基金
关键词
氮化钛
空心
阴极
离子淀积
TiN
Hollow cathode discharge deposition
diffusion barrier
