摘要
简述了铁电场效应管ＦＦＥＴ工作原理；说明了器件对薄膜和结构的要求；指出了铁电薄膜的电滞回线及金属铁电半导体结构的Ｃ－Ｖ特性。
his paper briefly presents the principle of ferroelectric field effect transistors,indi- cates the need of devices to characteristics of ferroelectric films and metal-ferroelectricsemlconduc- tive structure ,and shows the hysterisis loop of the films and C-V curve of MFS structure.
出处
《压电与声光》
CSCD
北大核心
1995年第3期31-34,共4页
Piezoelectrics & Acoustooptics
