摘要
为了获得高的带外抑制,我们设计了一种单相单向换能器与镜像阻抗连结换能器结合的滤波器结构。该结构由双通道组成,每通道上由一个电级宽度控制单相单向端变迹加权换能器和一个抽指加权换能器组成,它具有带外抑制高、插损小、体积小和制作容易等优点,克服了常规滤波器级联带来的插损大,难匹配的问题。最后给出了我们制作在127.86°Y-XLiNbO_3基片上的高带外抑制声表面波滤波器结果,其中心频率为70MHz,带宽为1.5MHz,带外抑制大于70dB,插损小于13dB,芯片尺寸小于5mm×10mm。
In order to obtain high out-of-band rejection,a filter struccture has been designed,which combines single phase unidirectional transducer(SPUDT)with mirror impedance connection transducer.The structure consists of double paths and each path is composed of a EWC apodized weighting transducer and a withdrawal weighting transducer.The structure bas the advantanges of high out-of-banb rejection, small loss, small size and easy manufacture, and overcomes the prob-lems of large loss and match difficult caused by cascade connection for conventional SAW filters.At last,the results of the SAW filter with high out-of-band rejection are given with the oenter fre-quency of 70MHz,bandwidth of 1.5MHz,out-of-band>70dB,insertion loss<13dB,the size of chip<5mm×10mm
出处
《压电与声光》
CSCD
北大核心
1995年第6期8-10,共3页
Piezoelectrics & Acoustooptics
关键词
声表面波
滤波器
高带外抑制
SAW,filter structure,high out-of-band rejection