摘要
我们提出了一个用于模拟SIMOX注入分布的经验公式,用此公式对某些氧注入分布进行了模拟,其结果与有关理论计算及实验值相比符合较好.我们的经验公式既有一定精度又形式简单,非常适合于作为VLSI全工艺模拟器中的一部份.
An emperieal formula to simulate the oxygen implanted distribution for SIMOX techniquehave been proposed.Using this formula,the simulation results are in good agreement with so-me experimental and former theoretical results. Our formula is both simple and accurate,which is suitable for using as a part of the VLSI complete process simulator.
基金
国家自然科学基金
关键词
SIMOX
氧注入
注入分布
工艺模拟
SIMOX technique
Oxygen implantation
Implanted profile profile
process simulation
