摘要
本文主要介绍了薄膜型InSb霍尔元件的芯片图形设计和磁路结构设计,并给出了设计取值范围.元件性能已得到实验验证,其主要参数指标达到了国外同类产品先进水平.
This paper introduces the design of the chip pattern and magnetic circuit of a thin-film Hall element,and presents the range of designed parameters that have been proven effective in experiments. The main specifications have come up to those of similar elements abroad.
出处
《仪表技术与传感器》
CSCD
北大核心
1995年第6期26-28,共3页
Instrument Technique and Sensor
关键词
霍尔元件
敏感膜
磁路
设计
Hall Element,Sensitive Film,Magnetic Circuit,Hall Voltage.
