重掺硼的分子束外延硅的喇曼光谱研究

RAMAN SCATTERING INVESTIGATION OF HEAVILY BORON-DOPED SILICON FILMS GRCWN BY MOLECULAR BEAM EPITAXY

研究了重掺硼分子束外延硅的载流子浓度对喇曼光谱线型的影响。以单声子态和准连续电子激发态之间的Ｆａｎｏ相互作用理论为基础，对实验结果进行了讨论和拟合。由拟合得到的喇曼光谱的半峰宽、峰移、峰高和不对称因子等各参数之间的关系式，结合霍耳效应测量，得到了喇曼光谱的半峰宽Г同自由载流子浓度ｐ之间的关系曲线为Ｔ＝２．５４ｐ￣０．４０８，其中Г，ｐ分别是以ｃｍ￣（－１）和１０￣１９ｃｍ￣（－３）为单位。提供了用喇曼光谱测量重掺硼分子束外延材料自由载流子浓度的测量的定标曲线。

eavily boron-doped silicon films grown by molecular beam epitaxy are investigated by Raman scattering. The lineshapes of Raman spectra are analyzed based on the theory of electron-phonon interaction. The relation between the linewidth and the carrier concentration is established experimentally,and the resul is consistent with the theoretical estimation found in previous literature.The relation provides a calibration for determining the carrier concentration through Raman scattering measurements.