含卤素源物质的金刚石薄膜淀积

DIAMOND THIN FILMS DEPOSITION BY USING HALOGEN CONTAINING SOURCE MATERIALS

含卤素源物质的金刚石薄膜淀积曹传宝（复旦大学）彭定坤，孟广耀（中国科学技术大学）关键词：金刚石，微波等离子体，化学汽相淀积，四氯化碳。０引言金刚石具有非常特殊的性质，它的硬度和弹性模量是已知材料中最高的，高导热性和高绝缘性兼备，有很高的电子／空穴迁移...

sing CH_4,CCl_4 and H_2 mixtures as source materials,We successfully synthe-sized diamond thin films at 570～580℃by the microwave plasma CVD process.Thediamond thin films were characterized by the Raman spectrum ,XRD,XPS and IR spectrum. The surface morphology of the films was observed with the ScanningElectron Mierosope. It was found that because CCl_4 compound was introduced,the diamond nucleation density decreased.And when the concentration of CCl_4reached to 2.0 %,no deposit but etehing pits could be formed.This was because ofthe existence of HCl in the system. The possible reason of substrate temperaturedecreasing in halogen containing system was discussed.