摘要
GaAsP混晶中Fe杂质基态与激发态的光离化截面的幅度比S(x)随组分x有规律地变化,本文提出一种理论估算,认为它是Fe能级无序分裂的结果.
A simplified theoretical calculation is described for the regular Change of the S(x), the ra-tio of the hole photoionization cross sections between ground states and excited states of Fe-centers in GaAsP.It is believed that it is due to the alloy disordered splitting of Fe-levels.
基金
国家自然科学基金
关键词
GaAaP
混晶半导体
杂质能级
Deep impurity Center
Alloy semiconductor
Alloy disorder
