摘要
本文利用X射线双晶衍射和电子探针显微分析方法,研究了MBE In_xGa_(1-x)As/GaAs(001)系统的晶格失配与In含量x值的关系.在外延层厚度t_(?)～2μm的情况下,获得范性应变临界组份x_c=0.114.当x<x_c时,外延层生长方向应变(?)_1⊥与x成线性关系;当x>x_c时,外延层出现范性形变.
The lattice mismatch of MBE In_xGa_(1-x)As/GaAs(001) system has been investigated by X-ray double-crystal diffraction and electronprobe microanalysis methods.The plastic straincritical concentration x=0.114 is obtained at epitaxy layer thichness t_0～2μm.When x<0.114,there is a linear relation between the perpendicular strain s⊥ and x. When x>0.114, the plas-tic deformation appears in the epitaxy layer.
关键词
晶格失配
双晶衍射
弹性变形
Lattice mismatch
Double-crystal diffraction
Elastic strain
Plastic strain
