摘要
通过直接观察n型GaAs-电解液结表面势垒的电压,对光反射和电反射的内在规律进行了比较.引入一个新的参数,来精细地区别这两种调制.从脉冲激光或(和)外加调制电压下空间电荷区中电场的具体分布,解释了二种调制光谱的共同点和差别.
The properties of the photoreflectance and electroreflectance have been compared intrin-sically with each other in the n-GaAs-electrolyte configuration, by means of a direct observa-tion on the voltage drops across the surface barrier. A new parameter is introduced to distin-guish finely the small differences existing in the both spectroscopies.Real distributions of theelectric field within space charge region under the modulation of pulsed laser irradiation orexternal electric voltage are considered to explain the apparent differences in the two spectros-copies.
基金
国家自然科学基金
关键词
光调制反射
GAAS
电压
波形
热垒区
Photoreflectance
Electroreflectance
Modulation parameter
Depth of pulse interaction
Effects of interface states