摘要
本文利用离子注入掺杂原子在热退火过程中的浓度分布SIMS数据计算了增强扩散系数的深度分布.
The enhanced diffusivity profiles of dopants implanted in silicon have been calculatedusing the concentration data of SIMS during thermal annealing process.Such profile is res-ponsible for the distribution and thermal characteristic of damage and defects produced byion implantation.
关键词
离子注入
掺杂
原子
扩散
Ion implantation
Enhanced diffussion
Diffusivity profile, Damage
