铝镓砷中硅δ掺杂的SIMS分析

ANALYSIS OF Si δ-DOPED AlGaAs USING SIMS

评述了国际上δ掺杂样品SIMS分析的现状，研究了相关的基础实验技术，讨论了分析硅δ掺杂的AlGaAs样品时，选择高质量分辨及对不同一次离子能量下相对灵敏度因子进行核准的必要性，考察了一次束的展宽效应和δ掺杂层位置的微分飘移，对硅δ掺杂的AlGaAs样品用O源进行了定量分析，并对结果作了讨论。

A brief review of SIMS analysis for δ-doped materials is presented in this paper. The experimental fundamentals are studied. In order to do quantitative analysis of Si doped AlGaAs it is necessary to use high mass resolution mode and to calibrate the relative sensitivity factors for different primary ion energy. The broadening effect of FWHM by the primary beam and the differential drift of the δ-doped layer position have been studied. Quantitative SIMS results of the δ-doped AlGaAs by using a O primary beam are presented and discussed.