射频磁控溅射制备SiO_2膜

RF MAGNETRON SPUTTERING DEPOSITION OF SiO_2 THIN FILMS

利用石英靶射频磁控溅射制备SiO2膜的工艺，采用L型阻抗匹配网络，并计算得到了等离子体的等效电容及等效电导。指出射频功率密度是最重要的沉积参数，靶面自偏压及SiO2膜沉积速率均随功率密度的增加而线性增加。溅射气压及氧分压对自偏压的影响较小，但两者的增加将导致SiO2沉积速率的降低。制备了可见光区透光性良好，折射率为1．46，沉积速率为35nm／min的SiO2膜。

The deposition technique of SiO2 thin films by RF magnetron sputtering with a quartz target was described. A L-shape impedance matching network was used and the effective capacitance and effective conductance of the plasma were calculated. It was pointed out that the RF power density was the most important parameter for deposition,an increase of RF power density would lead to a linear increase of the self bias and deposition rate. The sputtering pressure and oxygen partial pressure less affected the self bias,but an increase of the both resulted in decreasing of the deposition rate of SiO2 films. SiO2 films with good transparency in visible range and with a refractive index of 1. 46 were deposited at a deposition rate of 35 nm/min.