摘要
我们对MBE高掺杂的n-GaAs∶Si和p-GaAs∶Be进行了光致发光研究,详细比较了高掺杂n-GaAs和p-GaAs在光谱线型,峰值半宽,峰值位置等方面的差异,以及两者的发光与温度的关系.由分析得出,对于高掺杂的n-GaAs,填充在导带内较高能态(K≠0)的电子与价带顶(K=0)空穴的非竖直跃迁是主要的发光过程.而对于高掺杂的p-GaAs,则是以导带底附近(K(?)0)的电子和价带顶附近(K(?)0)的空穴竖直跃迁为主要发光过程.
PL of heavily doped n-GaAs:Si and p-GaAs: Be are measured.The spectra line shape,peakenergy position and fall width at half maximum (FWHM) of heavily doped n-and p-type Ga-As are compared in detail.For heavily doped n-GaAs, it is the main radiative recombinationmechanism that the electrons in the conduction band filled at the higher energy states recom-bine with holes located at the top of the valence band (△R≠0), which is a non-vertical tran-sition. For heavily p-GaAs, it is the main radiative recombination mechanism that electronsnear the bottom of the conduction band recombine with the holes near the top of valence band,which is a vertical transition (△R=0).
