近红外激光诱导InP（100）表面蚀刻反应

Near IR Laser-induced Chemical Etching of the InP(100) Surface

采用超声氯分子束和时间分辨质谱研究了由１０６４ｎｍ近红外激光诱导ＩｎＰ（１００）表面蚀刻反应的产物质量分，入射Ｃｌ＿２分子束的平动能效应，激光能量密度和表面温度的影响，并讨论了反应机理。

Laser- induced chemical etching of the InP (100) surface with a chlorinemolecular is investigated using a Nd: YAG laser at 1064 um. The mass and velocitydistributions Of reaction Products at different surface temperatures (290 K and 560 K) are determined by the time-resolved mass spectrometry. Both laser fluence and the normalcomponent of the incident Cl2 molecules' translational energy enhance the near-IR laserinduced etching reaction Of the InP (100) surface.A chemical reaction mechanism isproposed that a rate determined step might be the controlling of factor the laser-inducedthermal desorption of the adsorbed surface reaction products.