a－Si∶H　Schottky势垒太阳能电池结构中载流子俘获对电场的调制效应

Carrier Trapping Effects on the Electric Field in a-Si∶H Schottky Barrier Solar Cell Structures

本文应用计算机数值模拟方法研究了ａ－Ｓｉ：ＨＳｃｈｏｔｔｋｙ势主太阳能电池结构中载流子俘获对电场的调制效应．结果表明，无论先生空穴或电子俘获都将改变电池中的电场分布，导致准中性区（低场“死层”）出现或扩大，从而减小了电池的载流子收集长度，这是引起ａ－Ｓｉ：ＨＳｃｈｏｔｔｋｙ势垒太阳能电池光致性能衰退的一个重要原因．

A computer Simulation mokel of carrier trapping effects on the electric field in a-Si : H Schottky barrier solar cell structure using a numerical analysis has been developed. The results indicate that both photo-hole and photo-electron trapping change the electric field distribution, cause a wider quasi-neutral region (low-field 'dead layer'), resulting in reduced carrier collection length in the structure. This is a major source of light-induced degradstion of a-Si: H Schottky harrier solar cell Performances.