摘要
本文应用计算机数值模拟方法研究了a-Si:HSchottky势主太阳能电池结构中载流子俘获对电场的调制效应.结果表明,无论先生空穴或电子俘获都将改变电池中的电场分布,导致准中性区(低场“死层”)出现或扩大,从而减小了电池的载流子收集长度,这是引起a-Si:HSchottky势垒太阳能电池光致性能衰退的一个重要原因.
A computer Simulation mokel of carrier trapping effects on the electric field in a-Si : H Schottky barrier solar cell structure using a numerical analysis has been developed. The results indicate that both photo-hole and photo-electron trapping change the electric field distribution, cause a wider quasi-neutral region (low-field 'dead layer'), resulting in reduced carrier collection length in the structure. This is a major source of light-induced degradstion of a-Si: H Schottky harrier solar cell Performances.
关键词
载流子俘获
太阳能电池
电场
调制效应
Carrier trapping effect
light-induced degradation of a-Si: H Performance
Scherfetter-Gummel solution