Ga_(0.47)In_(0.53)As/SiO_2与Ga_(0.47)In_(0.53)As/Al_2O_3的界面性质

Interface Properties of Ga_(0.47)In_(0.53)As/SiO_2 and Ga_(0.47)In_(0.33)As/Al_2O_3

本文研究了GaInAs/SiO_2与GaInAs/Al_2O_3的界面性质.采用PECVD技术以TEOS为源以及采用MOCVD技术以Al(OC_3H_1)_3为源在n^+-InP衬底的n-Ga_(0.47) In_(0.33)As外延层上淀积了/SiO_2和Al_2O_3,制备成MIS结构.结果表明这些MIS结构具有良好的C-V特性,SiO_2/GaInAs界面在密度最低达 2.4×10^(11)cm^2·eV^(?),氧化物陷阱电荷密度达10^(?)～10^(10)cm^2,观察到GaInAs/SiO,结构中的深能级位置为E_c-E_T=0.39eV.GaInAs/Al_2O_3结构中的深能级位置为E_c=E_T=0.41eV.

The interface properties of GaInAs/SiO_2 and GaInAs/Al_2O_3 are studied.The Al-SiO_2-GaInAs and Al-Al_2O_3-GaInAs MIS structures were fabricated- by PECVD SiO_2 using TEOSand MOCVD Al_2O_3 using Al(OC_3H_7)_3 on n-type Ga_xIn_(1-x) As (x=0.47) and on n^+-InP su-bstrate,respectively.The results show that these MIS structures exhibit ideal C-V characteristics.The interface state density of 2.4×10^(11)cm^(-2)·eV^(-1) and oxide trapped charge of 10~9～10^(10)cm^(-2) were obtained for these MIS structures.The deep levels at E_c-E_T=0.39eV and atE_c-E_T=0.41 eV were observed in GaInAs/SiO_2 and in GaInAs/Al_2O_3,respectively.