摘要
本文描述一种由MOCVD生长的GaAs/GaAlAs 分别限制单量子阱片子制作的锁相列阵大功率激光器.由十个单横模器件耦合而成的列阵器件,其阈值电流为67mA,线性输出功率大于500mW,微分量子效率达60％.列阵器件由强耦合区和弱耦合区构成,考察了强耦合区的几何结构对耦合模即输出远场分布的影响.
Phase-locked array lasers made of MOCVD grown GaAs/GaAlA.graded-index separateconfinement heterostructure single quantum well wafer were investigated.The threshold currentof the array composed of ten ridge waveguide fundamental latteral mode lasers was 67 mA,linear output power was more than 500 mW, external differential quantum, efficiency was60%.The configuration af the arrays consisted of strongly coupling central region and weaklycoupling mirror regions, and effect of the geometrical configuration of the strongly couplingregion on the coupled supermode was examined.
关键词
MOCVD
GAALAS
锁相列阵
激光器
MOCVD
GaAs/GaAlA
graded-index separate-confinemet single quantum well structure
phased array laser
Array threshold
Output power
Differential quantum efficiency
Coupling structure
super mode
