摘要
本文介绍一种光刻刻蚀造型和聚酰亚胺钝化方法.这一新方法称耗尽层刻蚀,它可以使平面型晶体管达到理想击穿电压,而只需用负角斜面所占面积的一部份,且其实际击穿电压取决于对刻蚀深度的细心控制. 实验证明:采用这一新方法可以改善功率晶体管的击穿特性;减少低压击穿;抑制小电流H_(FE)退化;减小表面漏电和改善高温反向特性.
In this paper,a new method of photolithographing Etch contour and kapton surface pas-sivation of high power transistor is presented.The new method, termed the deplation etch me-thod,is capable of giving virtually ideal breakdown voltage for planr type transistor and usesonly a action of the area required for a typical negative bevel.The actual breakdown voltagedepends on how carefully the etch is controlled. Experimental results shows that this method improved junction breakdown properties, de-cresed small-currend common-emitter gain H_(FE) fall and surface leakage current and improv-ed junction high temperature praperties.
关键词
晶体管
大功率
刻蚀
耗尽层
钝化
Transistor Etch Depletion
Techniqve Passivation
Photolithograph
