GaAs/AlGaAs量子阱中的Г-X混和及谐振态和非限定态的研究

г-X Mixing and Resonant States and Non-Confined States in GaAs/AlGaAs Quantum Wells

本文使用单带双谷理论研究了GaAs/AlGaAs量于阱中的Г-X混和现象.介绍了Г态、X态和能级高于势垒的谐振态的特点.给出了谐振态能级随势阱和势垒层宽变化的关系.阐述了超薄层量子阱和非限定态的一些有趣的特性.在此基础上提出了一个超晶格能带的形成模型并对最新的一些实验结果给出了恰当的解释.

The Γ-X mixing in GaAs/AlGaAs quantum wells is studied using the one band two val-leys theory in this paper.We characterize the Γ states, X states and the resonant states withenergies higher than the barrier.The dependence of the energy levels for these resonant stateson the width of barrier and well is described.The interesting behavior for the superthin qu-antum wells and the non-confined states is explained.From these results,a formation modelfor the superlattice energy band is proposed and an appropriate explanation for some new ex-perimental results is given.