定域SOI区熔再结晶研究

Locallized Zone-Melting Recrystallization of Polycrystalline Silicon Films on Silicon Dioxide

用高频感应石墨条作为红外辐射热源,对淀积在二氧化硅衬底上的多晶硅进行了区熔再结晶.再结晶后硅膜晶粒宽度可达几百微米甚至几毫米以上,长度可在区熔扫描方向延伸到样品尺度.在晶粒中存在大量间隔约10-50μm的亚晶界.采用热沉技术及多晶硅膜厚调制技术对亚晶界进行了定域限制,达到了非常好的效果.TEM分析表明再结晶后硅膜呈[100]晶向.SEM观察表明再结晶后样品具有平整的表面及界面.Raman谱测量表明区熔再结晶后硅膜中张应力很小,约为0.9×10~9 dyne/cm^2.

Zone-melting recrystallization of polycrystalline silicon films deposited on SiO_2, substrateshas been carried out using a RF-induced graphite strip as the heater.The size of the grains inthe recrystallized silicon films are more than several hundred micrometers in width and as longas the size of the samples in length.There are many subgrain boundaries with spacings bet-ween 10-50 μm in the grains.Heat-sink structure and polycrystalline silicon thickness mo-dulation technique have been employed to entrain these subgrain boundaries,and very good re-sults have been obtained. TEM and SEM analyses indicate that the recrystallized silicon filmsare [100] orentation and have smooth surface and interfaces.Raman measurements show thatthe recrystallized silicon films are in tensile stress of about 0.9×10~2 dyne/cm^2.