摘要
测量了用MOCVD技术制造的InP δ掺杂样品的磁输运特性,量子化Hall效应和高电场下的热电子效应.得到了该样品的载流子分布,子能带结构,杂质传播宽度和电子迁移率等基本物理参数,观察到填充因子v=2的量子Hall平台和负微分电阻现象,建立和证实了δ掺杂样品的热电子传输模型.
The magnetotransport properties, quantum Hall effect and hot electron effect in σ-dopingIaP samples prepared by MOCVD technique are studied. The basic physical parameters: carrierdistribution, structure of subband, donor ion spreading and electron mobility have been estima-ted. The quantum Hall plateau at v=2 and negative differential resistance have been observed.A new hot electron transport model of σ-doping samples has been presented, which is identifi-ed by magnetotransport experiments.
关键词
掺杂
二维特性
热电子传输
δ-doping
Two-Dimensional charateristics
Hall effect
Hot electron transport
