摘要
用深能级瞬态谱(DLTS)研究了分子束外延生长的高纯GaAs薄膜中的深能级.带金电极的高纯GaAs薄膜经不同温度的热退火,其DLTS峰谱的位置和幅度均发生变化.这是由于在热退火中金电极与GaAs反应,从而出现各种各样的DLTS峰谱.来用器件制造的台面腐蚀工艺去除反应物后的DLTS峰谱退化为一个单峰谱.本文结合伏安特性的测量结果对DLTS峰谱的变化进行了分析和讨论.
Deep levels in MBE-Grown high purity GaAs thin films have been studied by the DeepLevel Transient Spectroscopy (DLTS).The high purity GaAs thin films with gold electrodeswere annealed at different temperatures, and the corresponding DLTS peaks changed both inposition and in amplitude .All of these are attributed to result from the reaction betweenthe gold electrodes and GaAs thin filn during annealing. After the reactant is etched awayby mesa-etching process for device fabrication, the DLTS peaks are finally degenerated into asingle peak.The above phenomena have been analysed and discussed by measuring I-V char-acteristics.
