摘要
用QJ201铝钎焊剂作为还原剂,将N型硅颗粒与铝片在585℃以下进行烧结,在硅和铝之间形成合金型P-N结。铝片起支撑体的作用,同时也是太阳电池的背电极。经过选择性腐蚀,去除硅颗粒周围的杂质层,用PET聚酯膜在真空条件下加热至PET的熔点以上,在压力作用下,使PET渗入到硅颗粒的缝隙中,形成绝缘层。将硅颗粒上表面的绝缘层打磨掉,溅射沉积透明导电层,作为电池的上电极。制备成的太阳电池光电转换效率为4.3%。
The alloy P-N junction was formed between silicon and aluminum, after the N-type silicon particle and the aluminum sheet were sintered at a temperature below 585°C, using aluminum soldering flux QJ201 as the reductant. The aluminum sheet acts as a support, meanwhile it is the rear electrode of the solar cell. Impurity layer around the silicon particle is removed by corroding selectively, and insulating barrier is formed by heating PET in vacuum at a temperature above the melting point of PET to make PET infiltrate into the apertures of the silicon particles under a pressure. Then the insulating barrier on the surface of the silicon particles is grinded, and transparent conductive film is deposited as the front electrode of the solar cell. A photoelectric conversion efficiency of 4.3% was achieved for this kind of solar cell.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2010年第6期709-712,共4页
Acta Energiae Solaris Sinica
基金
天津市科技攻关计划培育项目(05YFGPGX05500)