半导体与微电子技术

导出

摘要 0605770 具有GaAsN/GaAs超晶格的量子级联异质结构In0． 4Ga0．6As/GaAs量子点内次级电致发光=Intersublev- el electroluminescence from In0．4Ga0．6As/GaAs quan-

出处《电子科技文摘》 2006年第3期22-23,共2页 Sci.& Tech.Abstract

关键词微电子技术 GAAS 碳纳米管 DHBT

分类号 TN303 [电子电信—物理电子学]

引文网络
相关文献

1一凡.AlAsN和GaAsN薄膜生长[J].电子材料快报,1998(3):12-13.
2杨园静,涂洁磊,李雷,姚丽.生长温度对InAs/GaAs量子点太阳电池的影响研究[J].人工晶体学报,2014,43(2):461-464. 被引量：2
3王建,邢达.正方体GaAs量子点电子特性的数值自洽求解[J].量子电子学报,2004,21(3):371-375.
4吴海霞,屈晓楠,何易瀚,郑瑞沣,仲顺安.Design of systolic B^N circuits in Galois fields based on quaternary logic[J].Journal of Beijing Institute of Technology,2014,23(1):58-62.
5谭平恒,罗向东,葛惟昆,徐仲英,Zhang Y,Mascarenhas A,Xin H P,Tu C W.Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloys[J].Journal of Semiconductors,2006,27(3):397-402.
6Hacini K,Meradji H,Ghemid S,El Haj Hassan F.Theoretical prediction of structural,electronic and optical properties of quaternary alloy Zn_(1-x)Be_xS_ySe_(1-y)[J].Chinese Physics B,2012,21(3):321-327.
7徐松森.QUAD型KT88功放改进电路赏析[J].现代音响技术,2005(10):70-72.
8The Chinese Journal of Electronics(CJE) is the only English professional electronics journal available that offers a look into the contemporary thinking of China's top scientists and academicians[J].Chinese Journal of Electronics,2015,24(4).
9Renhong Liu,Weihan Tan,Wencang Xu,Jufang Zhang.A quantum mode theory of the micromaser[J].Chinese Science Bulletin,1998,43(5):425-430.
10The price is approximately. 23 percent higner than that in the second quarter.[J].China's Foreign Trade,2010(11):14-14.

电子科技文摘

2006年第3期

浏览历史

内容加载中请稍等...

半导体与微电子技术

相关作者

相关机构

相关主题

浏览历史