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In∶Fe∶LiNbO_3晶体的生长及其在全息关联存储中的应用(英文) 被引量:3

GROWTH OF In :Fe : LiNbO_3 CRYSTALS AND ITS APPLICATION IN HOLOGRAPHIC ASSOCIATIVE STORAGE
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摘要 用提拉法生长1%(摩尔分数,下同)In:Fe:LiNbO3(LN),2%In:Fe:LN,3%In:Fe:LN和Fe:LN晶体,配料中掺入0.03%(质量分数)Fe2O3。采用光斑畸变法测试晶体的光损伤阈值。结果表明:1%In:Fe:LN和2%In:Fe:LN晶体的光损伤阈值比Fe:LN晶体高1个数量级以上。3%In:Fe:LN晶体的光折变阈值比Fe:LN晶体高2个数量级以上。晶体的位相共轭效应测试结果表明,1%In:Fe:LN晶体的位相共轭反射率(R1=185%)高于3%In:Fe:LN晶体(R3=120%)。以3%In:Fe:LN晶体作为存储元件,1%In:Fe:LN晶体作为位相共轭镜,进行全息关联存储实验,其再现图像清晰完整,噪音小。 1% (in mole, the same below) In: Fe: LiNbO3(LN), 2% In: Fe: LN, 3% In: Fe: LN and Fe: LN crystals, all with 0. 03% (in mass) Fe2O3 were grown by Czochralski method in the atmosphere. The photo damage threshold of In : Fe : LN crystals was investigated by light spot distortion method. The results indicate that the photo damage threshold is one order of magnitude higher for 1% In : Fe : LN and 2% In : Fe : LN crystals and two orders of magnitude higher for 3% In : Fe : LN than that of Fe : LN crystal. The results from measuring the effect of phase conjugation of In : Fe : LN crystals show that the phase conjugate reflectivity R1 of 1% In : Fe : LN is 185%, higher than that of the 3% In : Fe : LN (R3 = 120%). Holo graphic associative storage experiments were carried out by using 3% In : Fe : LN as the optical storage element and 1% In : Fe : LN as the phase con iugate mirror, and a clear and integrated image was reconstructed with a high signal-to-noise ratio.
出处 《硅酸盐学报》 EI CAS CSCD 北大核心 2005年第8期950-953,共4页 Journal of The Chinese Ceramic Society
基金 国家重点基础研究973计划项目(G19990330) 国家高技术研究发展863计划(8632001AA31304)资助项目。
关键词 掺铟 铁铌酸锂晶体 全息关联存储 光损伤阈值 提拉法晶体生长 lithium niobate doped with indium and iron crystal holographic associative storage photo damage threshold Czochralski method
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