摘要
研究了线偏振脉冲光场激发下,单个各向异性InGaAs量子点的高偏振光发射.给出其偏振因子与两个正交本征态之间的交叉弛豫之间的关系式.分析表明,交叉弛豫随激发场强度增大,并导致偏振因子随激发场入射脉冲面积减小.
The high-polarized single-photon emission in single anisotropic InGaAs quantum dots excited by linear pulse excitation was discussed. The expression of the polarization and cress relaxation between two orthogonal eigenstates was given. It was revealed that the cress relaxation increased with intensity of the excitation, which resulted in the decrease of polarization factor with the input pulse area.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2005年第9期4141-4145,共5页
Acta Physica Sinica
基金
国家自然科学基金(批准号:10344002和10474075)资助的课题.~~
