摘要
从InGaAsP单量子阱激光器热效应分析入手,采用自行设计的热封闭系统对808nm InGaAsP单量子阱激光器温度特性进行了研究.实验表明,在23℃～70℃的温度范围内,器件的功率由1.12W降到0.37 W,斜率效率由1.06 W/A降到0.47 W/A.实验测得其特征温度T0为321 K.激射波长随温度的漂移为0.45 nm/℃.其芯片的热阻为2.44℃/W.
The temperature characteristics of 808 nm InGaAsP SQW lasers have been investigated in a heat-tight system by analyzing their thermal effects. It is shown that the power and the slope efficiency of the devices decreases from 1.12 W to 0.37 W and from 1.06 W/A to 0.47 W/A in the temperature range of 23 ℃～ 70 ℃, respectively. Lasing wavelength shift coefficient is 0.45 nm/℃. The characteristic temperature To of 321 K is experimentally obtained. The thermal resistance of the chip,determined experimentally,is 2.44℃/W.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
2005年第4期291-293,共3页
Semiconductor Optoelectronics
