四探针Mapping自动测试仪中电阻率温度系数的规范化拟合多项式的应用

An Application of Normalized Matching Polynomials of TCR to Automatic Mapping Instrument with Four-Point Probe

本文回顾了单晶硅及扩散硅的电阻率温度系数(TCR)的实验结果,认为美国ASTM的TCR曲线是比较完整,确切的.利用我们开发的规范化多项式拟合方法,可将它表示成五阶多项式.将它存入具图像识别四探针定位功能自动测试系统的计算机中后,可以立即得到折合到23℃的硅单晶断面的电阻率分布.本文阐述了规范化拟合的原理,给出了单晶硅的TCR的拟合结果.

It was recalled to the experimental results about TCR for rnonocrystal silicon as well as diffused silicon, and confirmed that the TCR curves for monocrystal silicon published in ASTM is complete and definite. They can be expressed as polynomials with five orders by using the normalized match, developed by us. After they were reserved in computer of the automatic measurement system with the four-point probe positioning function, relying on the graphic recognition, the profile of resistivity, reduced to that of 23℃ ,in the cross-section of slices can be immediately obtained. The principle of this normalized matching method and the obtained results of TCR for crystal silicon are presented in this paper.