体硅CMOS FinFET结构与特性研究

Bulk Silicon CMOS FinFET's Structure and Characteristics

建立在SOI衬底上的FinFET结构被认为是最具全面优势的非常规MOS器件结构.本文通过合理的设计将FinFET结构迁移到普通体硅衬底上,利用平面凹槽器件的特性解决了非绝缘衬底对器件短沟道效应的影响,同时获得了一些标准集成电路工艺上的改进空间.运用标准CMOS工艺实际制作的体硅CMOSFinFET器件获得了较好的性能结果并成功地集成到CMOS反相器和环形振荡器中.结构分析与实验结果证明了体硅CMOSFinFET在未来电路中的应用前景.

Original SOl FinFET was considered as the best candidate among various non-classic MOS structures. This paper firstly built a FinFET structure on normal bulk - Si substrate by a reasonable design. The SCE of FinFET fabricated on the non-insulating substrate was suppressed greatly for the existing of a grooved planar device by parallel connection. In addition, this new structure provided more process space than original SOl FinFET. The devices, which were fabricated with a standard CMOS process, showed a good performance and were integrated into a small-scale circuit successfully.The results demonstrated that bulk-Si FinFET was a good solution for future VLSI.