GaN基量子阱激光器交叉饱和特性的计算与分析

Calculation and Analyses of Cross-Saturation Characteristics of GaN Quantum Well Lasers

通过分析GaN能带结构和跃迁矩阵元,对GaN基量子阱激光器的交叉饱和特性作了理论上的计算与分析.并给出了TE和TM模自身交叉与相互交叉的交叉饱和系数的曲线,分析了能带结构和载流子面密度对交叉饱和特性的影响.发现相互作用的两光场频率相等时,两光场的交叉饱和系数出现峰值,两光场频率不等时相应的交叉饱和系数远小于峰值;同时发现在交叉饱和系数峰值处,不同载流子面密度将对交叉饱和系数产生不同的影响,因此,载流子面密度的改变可影响交叉饱和系数.

The cross-saturation characteristics of GaN quantum well lasers are theoretically calculated and analyzed based on the analyses of the energy band structure and the transition matrix elements of GaN. The curves of the cross-saturation coefficients for serf-crossed or crossed TE and TM modes are then obtained. The effects of the energy band structure and the carrier sheet density on the cross-saturation characteristics are finally analyzed. It is found that, when the two interactional optical fields are of the same frequency, the cross-saturation coefficient will achieve the peak value; on the contrary, when the two fields are of different frequencies, the cross-saturation coefficient is far less than the peak value. Moreover, when at its peak value, the cross-saturation coefficient is greatly affected by the carrier sheet density. Thus, one can change the cross-saturation coefficient by changing the carrier sheet density.