摘要
为配合２０００门ＧａＡｓ超高速门阵列及ＧａＡｓ超高速分频器等２英寸ＧａＡｓ工艺技术研究，开展了２英寸ＧａＡｓ快速热退火技术研究。做出了阈值电压为０～０．２Ｖ，跨导大于１００ｍＳ／ｍｍ的Ｅ型ＧａＡｓＭＥＳＦＥＴ和夹断电压为－０．４～－０．６Ｖ，跨导大于１００ｍＳ／ｍｍ的低阈值Ｄ型ＧａＡｓＭＥＳＦＥＴ。
The characteristics of 2in GaAs rapid thermal annealing is studied for the fabrication of GaAs 2000 gates array and GaAs very-high speed frequency divider.E-type GaAs MESFET with threshold voltage ranging from 0 to 0.2V,transconductance greater than 100mS/mm,and low-threshold D-type GaAs MES FET with pinch-off voltage ranging from-0.4 to-0.6V and transconductance greater than 100mS/mm have been fabricated.
出处
《半导体情报》
1996年第1期28-32,共5页
Semiconductor Information
关键词
砷化镓
快速热退火
离子注入
GaAs,RTA,Ion implantation,Very-high speed gate array
