图形化SOI LDMOS功率器件的性能分析

Performance analysis of a patterned-SOI LDMOS power amplifie r

本文提出了一种在沟道下方埋氧层中开硅窗口的图形化SOI LDMOSFET新结构。工艺和性能分析表明,它可抑制SOI结构的浮体效应和自加热效应,具有低的泄漏电流,以及高的电流驱动能力。这种结构具有提高SOI功率器件性能和稳定性的开发潜力。

A novel patterned- SOI（ patterned- Silicon- On- Insulator） LDMOS structure with a silicon window beneath the P well is proposed and simulated numerically. In comparison to the partiallydepleted SOI counterpart, the floating body effect and self - heating effect are distinctly suppressed. Furthermore, the advantage of SOI structure＇s low leakage current do not degrade, and the current driving capability is high. The proposed structure will be a promising choice to improve the performance and stability of SOI power devices.