制备纳米级ULSI的极紫外光刻技术

Extremely Ultraviolet Lithography Fabrication Technology for Nanometer ULSI Devices

在下一代光刻技术中,由于极紫外光刻(EUVL)分辨率高、且具有一定的产量优势及传统光学光刻技术的延伸性,因而是IC业界制备纳米级ULSI器件的首选光刻方案之一。本文论述了EUVL技术的原理、加工工艺和设备,并对比分析了EUVL的生产成本、应用前景及其优缺点。

In the next generation lithography（NGL） technology, extremely ultraviolet lithography （EUVL） has high-resolution, certain output and technical extension property of traditional lithography, so it becomes one of the first-selected lithography schemes for preparing the nanometer ULSI devices in IC circles. The principle, technological process and equipments of EUVL are discussed and its production cost, application prospects, analyzed. advantages and disadvantages are also comparably analyzed.