摘要
SrBi2.2 Ta2O9（SBT） thin film with thickness of 2μm was successfully prepared by sol-gel method, using strontium acetate semihydrate [Sr（CH3COO）2·1/2H2O] and bismth subnitrate [BiO（NO3）], and tantalum ethoxide [Ta（OCH2CH3）5] as source materials, glacial acetic and ethylene glycol as solvents. The X-ray diffraction（XRD） and transmission electron microscope（TEM） results indicate that SBT layer-perovskite phase obtained has to be single phase, SBT thin film is formed after being annealed at 800℃ for 1min. The typical hysteresis loop of SBT thin film on Pt/Ti/SiO2/Si is obtained, and the measured polarization value of the SBT thin film is 4.2μC/cm2.
SrBi2.2 Ta2O9 （SBT） thin film with thickness of 2μm was successfully prepared by sol-gel method, using strontium acetate semihydrate [-Sr（CH3 COO）2·1/2H2O] and bismth subnitrate [BiO（NO3 ）], and tantalum ethoxide [Ta（OCH2CH3）5] as source materials, glacial acetic and ethylene glycol as solvents. The X-ray diffraction （XRD） and transmission electron microscope（TEM） results indicate that SBT layer-perovskite phase obtained has to be single phase, SBT thin film is formed after being annealed at 800℃ for 1 min. The typical hysteresis loop of SBT thin film on Pt/Ti/SiO2/Si is obtained, and the measured polarization value of the SBT thin film is 4.2℃C/cm^2.
基金
Project(HIT.2001.67)supportedbytheScientificResearchFoundationofHarbinInstituteofTechnology
project(50172012)supportedbytheNationalNaturalScienceFoundationofChina
