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MEXTRAM504模型及其对SiGe HBT的模拟 被引量：1

BJT MEXTRAM Level 504 and its Simulation for SiGe HBT
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摘要 针对传统SGP模型的不足,介绍了一种新型的BJT模型MEXTRAM504及其等效电路,与传统模型相比,MEX-TRAM显示了极高的准确度。由于特别增加了描述基区缓变和基区载流子复合的两个参数,使MAXTRAM适合模拟加入SiGe工艺技术的HBT,模拟曲线与Medici的模拟相当吻合,为射频器件设计和电路模拟奠定了良好的基础。 Due to the deficiency of conventional models, a new BJT model MEXTRAM, level 504 and its equivalent circuit are introduced. Compared with former models,it exhibits perfect accuracy. MEXTRAM specially uses two parameters for SiGe HBT model, and experiments show that the simulation curves have a very good agreement with Medici simulation data. It is the meaning for the advanced device design and circuit simulation.
作者 肖琼 郑学仁
机构地区 华南理工大学微电子研究所
出处 《电子器件》 EI CAS 2005年第3期524-528,共5页 Chinese Journal of Electron Devices
关键词 MEXTRAM 504 SGP SIGE 集电极外延层模型 自热模型 MEXTRAM 504 SGP SiGe collector epilayer model self-heating model
分类号 TN402 [电子电信—微电子学与固体电子学]
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参考文献8

  • 1Lin Fujiang , Zhou Tianshu . SiGe HBTs Model Converting Technique from SGP to VBIC Model[J]. Microelectronics Journal, (2002) 33:45-54.
  • 2Introduction to and Usage of the Bipolar Transistor Model Mextram[J/OL]. www.semiconductors.philips.com.
  • 3颜渝瑜,钱晓州.适合器件设计和电路模拟的SiGe基区HBT物理模型[J].微电子学,1997,27(4):232-242. 被引量：4
  • 4Model Derivation of Mextram 504: The Physics behind the Model[J/OL]. www.semiconductors.philips.com.
  • 5Bipolar Transistor Level 504[J/OL]. www.semicondrctors.philips.com.
  • 6Parameter Extraction for the Bipolar Transistor Model Mextram, Level 504[J/OL]. www.semiconductors.philips.com.
  • 7Mextram 504 for SiGe HBT Applications[J/OL]. www.semiconductors.phillips.com.
  • 8Sonmez E, Durr W, Parameter Extraction of SiGe HBTs for a Scalable MEXTRAM Model and Performance Verification by a SiGe HBT MMIC Active Receive Mixer Design for 11 GHz[J]. 2000 IEEE.

共引文献3

同被引文献38

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电子器件
2005年 第3期

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