摘要
The morphology and phase shift of phase-separated PMMA/SAN thin film on silicon wafer were studied by in situ AFM with hot stage through the annealing and quasi-quenching. The results show that the phase shifts are different between high temperature and room temperature, and between ultrahigh vacuum and ambient and between in situ and ex situ although the morphologies are almost invariable. The reasons were discussed simply.
The morphology and phase shift of phase-separated PMMA/SAN thin film on silicon wafer were studied by in situ AFM with hot stage through the annealing and quasi-quenching. The results show that the phase shifts are different between high temperature and room temperature, and between ultrahigh vacuum and ambient and between in situ and ex situ although the morphologies are almost invariable. The reasons were discussed simply.
出处
《高等学校化学学报》
SCIE
EI
CAS
CSCD
北大核心
2005年第9期1777-1779,共3页
Chemical Journal of Chinese Universities
基金
国家自然科学基金(批准号:20074037
50290090
20304015)
国家重大基础研究前期研究专项(批准号:2002CCAD4000)
国家杰出青年科学基金(批准号:59825113)
国家自然科学基金重点项目(批准号:20334010)资助.
关键词
高分子共混
薄膜
相分离
退火
淬火
原位
原子力显微镜
Polymer blend
Thin film
Phase separation
Annealing
Quasi-quenching
In situ
AFM