新型掺Bi的YIG磁光薄膜

A New Type Magneto-optic Bi Substituted YIG Thin Film

对用于磁光法拉第旋转器件的掺Bi的YIG薄膜进行了介绍与分析，这种新型磁光薄膜（YbTbBi）3（FeGa）5O12是采用液相外延技术在CaMgZr：GGG晶片的〈111〉方向生长的，通过合理的配方及工艺生长出了成份均匀，光吸收小，在波长λ＝1．31μm和λ＝1．55μm时，插损分别为0．3dB和0．2dB，法拉第旋转角分别为2400°／cm和1600°／cm的薄膜，经抛光至290μm的厚度，法拉第旋转角为45°（波长λ＝1．55μm）。性能参数基本达到实用化器件的要求。

A new type Bi substituted YIG thin film, used for magneto-optic Faraday rotationdevice, is introduced and analyzed. This magneto-optic thin film (YbTbBi)3 (FeGa)5O12 isgrown on the CaMgZr: GGG substrates by liquid phase epitaxy. The films with homogenouscomposition, small optic absorption are produced by utilizing rational burden and appropriatetechnology. For λ=1. 31 μm and λ=1.55 μm, the insertion loss is 0.3 and 0.2 dB,Faraday rotationcoefficient is 2400°/cm and 1600°/cm respectively. After through polishing the film withthick 290 μm, Faraday rotation angle 45 deg was obtained. Its properties and parameters comeup to basic requirements of pratical devices.