摘要
本文对GaAs衬底边缘照射微带线型光控微波开关进行了开关的结构参数设计,对开关的插入损耗和隔离度进行分析计算,并进一步讨论了频率响应及其光脉冲能量对开关隔离度的影响。
This paper designs the formation parameters of the high-speed opto-electronic GaAs microstrip switching controlled by a pulse-Operated laser dliode via substrate-edge excitation.Insertion loss and isolation with the switch are studiedfrequecy response and influencing the switching isolation with varying opticat pulse energies are discussed.
出处
《光电子.激光》
EI
CAS
CSCD
北大核心
1996年第1期20-25,共6页
Journal of Optoelectronics·Laser
关键词
砷化镓
光控微波开关
开关隔离度
formation parameters,characterization computation,frequecy response,optical variability.