摘要
采用中频感应提拉法生长了Yb:FAP晶体。对晶体生长中影响晶体质量的因素特别是原料的处理、CaF2的挥发等进行了研究和讨论。运用ICP-AES测定Yb3+离子在Yb:FAP晶体中的分凝系数。对Yb:FAP晶体进行了高分辨X射线的四圆衍射实验,结果表明晶体具有比较高的晶格完整性。
Yb：FAP crystal has been grown by Czochralski method. The main factors that affect the quality of Yb-FAP crystal were studied, especially the treatment of raw materials and the volatilizations of CaF2. The segregation coefficients of Yb^3＋ ions in Yb： FAP crystal were detected by ICP-AES method. The lattice integrality of Yb：FAP crystal was investigated by high-resolution X-ray diffraction.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2005年第4期581-584,共4页
Journal of Synthetic Crystals
基金
国家高科技研究发展计划(863)资助项目(No.2002AA311030)
关键词
Yb:FAP晶体
晶体生长
原料
挥发物
分凝系数
Yb ： FAP crystal
crystal growth
raw material
volatile matter
segregation coefficient
