Si和GaAs衬底上的ZnTe、CdTe分子束外延材料的晶向倾角

Tilted Angels of ZnTe and CdTe Epilayers Grown on Si(211) and GaAs(211)B Substrates by MBE

本文采用X射线双晶衍射二次测量法对76mmSi(211)和GaAs(211)B衬底上生长的ZnTe和CdTe外延层的晶向倾角进行了测量,发现对于Si和GaAs衬底,外延层的[211]均绕外延层与衬底的[0-11]复合轴朝[111]倾斜,其晶向倾角与晶格失配呈线性关系;通过实际测量验证了在外延层探测到的[133]峰代表[211]关于[111]旋转180°的[255]孪晶向。

Measurements using X-ray double crystal diffraction（XDCD） were carried out to investigate the tilted angels of ZnTe and CdTe epilayers grown on 76mm Si（211） and GaAs（211）B substrates by molecular-beam epitaxy. The results show that the epilayer＇ s [211 ] tilts toward [ 111 ] about the [0-11 ] coincidence axis, independent of the substrates employed. Further more, a linear relationship of tilted angles and lattice mismatch between the epilayer and substrate was found. It was also confirmed that [ 133 ] peak of the epilayer corresponds to [255 ], which is the first-order twin of [211 ] about [ 111 ] twist axis.