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超大规模集成电路的可制造性设计 被引量:1

Design for Manufacturability of VLSI
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摘要 以Synopsys推出的TCAD软件TSUPREM-Ⅳ和Medici为蓝本,结合100nm栅长PMOSFET的可制造性联机仿真与优化实例,阐述了超大规模集成电路DFM阶段所进行的工艺级、器件物理特性级优化及工艺参数的提取。 With the Synopsys TCAD design tools including TSUPREM-Ⅳ and Medici, the process and device simulation are introduced by extracting and comparing the characteristics of the 100 nm gate length PMOSFET transistors with different process conditions and parameters.
作者 郭琦 李惠军
出处 《微纳电子技术》 CAS 2005年第9期435-439,共5页 Micronanoelectronic Technology
关键词 超大规模集成电路 深亚微米 可制造性设计 very large scale integrated circuit (VLSI) deep submicron (DSM) design for manufacturability (DFM)
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参考文献6

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同被引文献14

  • 1张培勇,严晓浪,史峥,高根生,马玥,陈晔.亚100纳米级标准单元的可制造性设计[J].电子学报,2005,33(2):304-307. 被引量:3
  • 2李季,史峥,沈珊瑚,陈晔.亚波长光刻离轴照明和次分辨率辅助图形技术[J].江南大学学报(自然科学版),2006,5(6):679-684. 被引量:2
  • 3赵珉,杨清华,刘明,陈宝钦.可制造性设计在纳米SOC中的应用和发展[J].微纳电子技术,2007,44(6):282-288. 被引量:2
  • 4Chang Runzi, Cao Yu, Costas J Spanos. Modeling the Electrical Effects of Metal Dishing Due to CMP for On - Chip Interconnect Optimization[J]. IEEE Trans. on Electron Devices,2004,51(10):1 577 - 1 583.
  • 5Calhoun B H, Cao Yu, Li Xin, et al. Digital Circuit Design Challenges and Opportunities in the Era of Nanoscale CMOS [J]. Proceedings of IEEE,2008,96(2) :343 - 365.
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  • 7Enderling S, Brown C L, Smith S,et al. Sheet Resistance Measurement of Non - standard Cleanroom Materials Using Suspended Greek Cross Test Structures [J]. IEEE Trans. on Semiconductor Manufacturing, 2006,19 ( 1 ) : 2 - 9.
  • 8Smith S,Walton A J, Ross A W S,et al. Evaluation of the Issues Involved with Test Structures for the Measurement of Sheet Resistance and Linewidth of Copper Damascene Interconnect[A]. Proceedings of 2001 International Conference on Microelectronic Test Structures[C]. Kobe,Japan, 2001:195 - 200.
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