摘要
以Synopsys推出的TCAD软件TSUPREM-Ⅳ和Medici为蓝本,结合100nm栅长PMOSFET的可制造性联机仿真与优化实例,阐述了超大规模集成电路DFM阶段所进行的工艺级、器件物理特性级优化及工艺参数的提取。
With the Synopsys TCAD design tools including TSUPREM-Ⅳ and Medici, the process and device simulation are introduced by extracting and comparing the characteristics of the 100 nm gate length PMOSFET transistors with different process conditions and parameters.
出处
《微纳电子技术》
CAS
2005年第9期435-439,共5页
Micronanoelectronic Technology
关键词
超大规模集成电路
深亚微米
可制造性设计
very large scale integrated circuit (VLSI)
deep submicron (DSM)
design for manufacturability (DFM)