期刊文献+

新型半导体断路开关及其脉冲功率发生器 被引量:2

A New Semiconductor Opening Switches and Its Pulse Power Generator
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摘要 基于半导体断路开关(SOS)的脉冲功率发生器是一种新型的全固态开关系统,具有输出脉冲电压高、使用寿命长、可靠性和重复率高的特点。本文详细介绍了SOS效应与断路开关的工作原理,研究了基于SOS的脉冲功率发生器电路结构并对开关电流进行仿真,仿真结果与国外器件的实测特性相近。 Pulse power generator based on Semiconductor Opening Switches (SOS) is an all solid state switching system, the opening switch has exhibited good operation stability and high reliability. SOS generators have the output voltage from 0.1 to 1MV, the pulse repetition frequency from 0.1 to 5kHz. This paper describes the principle of opening switch and the SOS effect in detail. Based on simplified SOS equivalent circuit model the simulation results is similar to the tested results in Russia.
机构地区 华中科技大学
出处 《电力电子》 2005年第3期57-60,共4页 Power Electronics
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参考文献7

  • 1Engelko A,Bluhm H, et al.Simulation of semiconductor opening switch physics[].Proc th IEEE Int Pulsed Power Plasma Science Conf.2001
  • 2Kotov Yu A,Mesyats G A,Rukin S N, et al.A novel nanasecond semiconductor opening switch for megavolt repetitive pulsed power technology: Experiment and Applications[].Procth IEEE Int Pulsed power Conf.1993
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同被引文献24

  • 1杨海燕,刘纯亮.基于半导体断路开关的脉冲功率源及其应用[J].真空电子技术,2008,21(1):12-15. 被引量:1
  • 2黄子平,王文斗.非线性含磁芯线圈的PSpice模拟[J].强激光与粒子束,2004,16(8):1063-1066. 被引量:15
  • 3苏建仓,刘国治,丁臻捷,丁永忠,俞建国,宋晓欣,黄文华,浩庆松.基于SOS的脉冲功率源技术新进展[J].强激光与粒子束,2005,17(8):1195-1200. 被引量:32
  • 4刘健,张斌.SOS半导体断路开关器件研制和实验研究[J].电力电子技术,2006,40(5):130-132. 被引量:5
  • 5张东辉,严萍,高迎慧,孙鹞鸿.Pspice电路仿真中变压器模型的使用[J].电气应用,2007,26(1):21-26. 被引量:12
  • 6KotovY A, Mesyats G A, Rukin S N, et al. A novel nanosecond semiconductor opening switch for megavolt repetitive pulsed power technol- ogy~ experiment and applications[C]//Proc of 9th IEEE Pulsed power Conf. 1993:134-139.
  • 7Rukin S N, Mesyats G A,Darznek S A, et al. SOS-based pulsed power: development and applications[C]//Proc of 12th IEEE Pulsed Power Conf. Monterey. 1999:153-156.
  • 8Engelko A, Bluhm H. Optimal design of semiconductor opening switches for use in the inductive stage of high power pulse generators[J]. Journal of Applied Physics, 2004, 95 (10) : 5828-5836.
  • 9Darznek S A, Mesyats G A, Rukin S N. Dynamics of electron-hole plasma in semiconductor opening switches for uhradense currents[J]. Technical Physics, 1997, 42(10) : 1170-1175.
  • 10Frost C A, Focia R J, Stockebrand T C. Multi-kilovolt solid-state picosecond switch studies[C]//Pulsed Power Plasma Science. 2001: 17-22.

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