无掩模腐蚀工艺对硅电容力敏结构的改进

Improvement for Si Capacitive Mechanical Structures Using a Kind of Maskless Etching Process

提出并利用一种新颖的无掩模腐蚀技术,针对以往硅体微机械加工的电容力敏器件特性的缺陷,从结构入手加以改进.分别制作了加速度对称梁-质量块结构和单边推挽压力结构,并取得了预期的结果.文中给出了理论分析和实验验证.

A novel maskless etching technique is utilized in the work of this paper to im-prove structural characters of both Si capacitive accelerometers and pressure sensors. Asymmetric beam-mass structure and a single-sided push-pull structure are successfullydesigned and fabricated. The theoretical analyses are related and verified by experimen-tal results.