摘要
本文给出了分析ＧｅＳｉ／Ｓｉ应变异质结中应变分布和弯曲的力学模型．该模型将外延层和衬底中的应变分为失配应变和弯曲应变，在假设整个异质结构均匀弯曲的情况下，根据力学、平衡条件得到了计算应变异质结构应变分布和弯曲半径的有关公式．这些模型结果结合Ｘ射线双晶衍射测量和模拟可以得到外延层的生长参数和整个异质结构的应变分布及弯曲半径．
Abstract A mechanical model is given for the strain distribution and curvature radius in GeSi/Si heterostructure. In this model, the strain in the heterostructure is supposed to be the sum of misfit strain and bending strain. For heterostructure with a coherent or incoherent interface, formulas for strain and curvature are obtained by considering the mechanical balance requirements under the assumption of uniform bending. The model combined with X ray double crystal diffraction measurement and simulation can give all the information about epilayer grown parameters and strain distribution in the heterostructure. The validity of uniform bending is discussed.
