摘要
用Ｘ光双晶衍射、Ｈａｌｌ和光致发光研究了ＭＯＣＶＤ生长的ＧａｘＩｎ１－ｘＰ（ｘ＝０．４７６～０．５０５）外延层．发现Ｇａ组分随Ｖ／Ⅲ比的增大略有下降，认为是由于Ｇａ－Ｐ键比Ｉｎ－Ｐ键强所造成的．７７Ｋ下电子迁移率达３３００ｃｍ２／（Ｖ·ｓ）．Ｇａ０．５Ｉｎ０．５Ｐ的载流子浓度随生长温度升高、Ｖ／Ⅲ比的增大而降低，提出磷（Ｐ）空位（Ｖｐ）是自由载流子的一个重要来源．１７Ｋ下ＰＬ峰能和计算的带隙最大相差１１３ｍｅＶ，这可能与ＧａＩｎＰ中杂质或缺陷以及其中存在有序结构有关．
Abstract MOCVD-grown GaxIn1-xP (x= 0. 476￣ 0. 505 )epilayers were characterized by double-crystal X-ray diffraction(DCXD),Hall measurement and Photo-luminescence. It is found that Ga composition x decreases a little with increasing V / Ⅲ ratio at 650℃ due to the competition between the formation of GaP and InP. The electron mobility of Ga0.5In0.5 P reaches 3300cm2/(V. s) at 77K. The carrier concentration decreases with increasing growth temperature and V / Ⅲ ratio. It suggests that Phosphorus (P) vacancies act as donors. At 17 K, the difference between PL peak energy and calculated band-gap energy of GalnP is between 84￣113 meV. This is probably related to impurities and ordered structure in GaInP.
